A novel novel Nanoset Chip Fab Process

An IEEE member, Rudra is now working on a new nanoset chip manufacturing process as a research and development integration engineer IBM Research In Albani, NY

Method uses self-concluded Litho-ETTE Lito-Each technology to create copper wiring structures for the back-of-off-line integrated circuit on the method of 21 to 23 nanometers. Technology is used Gate-all-transistorWhich consists of nanosetes: thin, dhad layers of silicon that are surrounded by the electrode of the gate. Nanosets increase the current flow control, reduce leakage, and enable high transistor density, according to it IBM,

Fabrication project is a joint initiative between IBM Research and RapidusThe headquarters of a Japanese semiconductor manufacturer is in Tokyo.

Says Rudra, “Nanoset transistors are paving the way for faster and more energy-skilled processors for transistors AI and other uses.” “By improving the beol interconnects, RC delays and electromegation can be reduced, ensuring that transistor-level profit should be translated into a system-level performance.”

For his work, he was recognized last year IEEE Computer Society‘S Top 30 starting career professional in computing List and US $ 2,500 received.

Computer Society recognition “I confirm my belief that I am moving in the right direction,” Rudra, “and it encourages me to carry forward the boundaries of semiconductor technology and computing.”

Inspired by a physics teacher

Like many engineers, Rudra fascinated how things work as a youth. Growing in India, it will separate remote-controlled cars and use motors and batteries to create something new.

No one in his family has worked in science, technology, engineering or mathematics, he says, but science has always felt “completely natural”.

His attraction with STEM themes in high school deepened, and his teachers gave air to his passion. But he was Mr. Shenoy, a professor of physics Indian Institute of Technology, DelhiWho inspired him to pursue research in the semiconductor area.

As a graduate on Motilal Nehru National Institute of TechnologyAllahabad, in India, Rudra took an online semiconductor optoelectronic certification course introduced by NPTEL, which was taught by Shenoy.

Motivated to gain experience in the region from 2017 to 2019, Rudra completed several internships working on creating a semiconductor in organizations. Indian Institute of Technology (BHU)Varanasi; Indian institute of technologyKharagpur; And this Central electronics engineering research institute,

“This internship was my first real risk for experimental research and gave me a foundation in the device physics and physics,” they say.

He earned a bachelor’s degree in Electronics and Communication Engineering from MNNIT in 2019.

Construction and working in Finfet

He became a research assistant after graduation Indian institute of science (IISC), in Bengaluru.

There he developed a thin film of manganese vanadium oxide using the Epitaxi process. The method increases manganese vanadium oxide at the top of the crystal substrate – which gives more control over the thickness, composition and crystal structure of the film to the engineers, according to it Photonics mediaRudra used the film to develop a photodater for infrared lights.

After a year he joined the semiconductor manufacturer GlobalfoundriesAlso in Bengaluru as an integration and yield engineer. He continued his work in IISC over the weekend.

“Before joining, I had minor expectations – due to limited semiconductor manufacturing ecosystem in India on a large scale, they say. “But I realized that the hardware-focused work was actually being done in the industry. That experience planted the seed of infection from academia to state-of-the-art industrial R&D.”

“For any young professional in Stem, IEEE is not just a resource; it is a launchpad.”

In Globalfoundries, he worked on beol interconnects to increase the yield of the company’s finfet chips, which is used in automotive technology, smartphones and smart speakers. In the traditional planner transistor, the gate sits over a flat silicone channel, which controls the current flow between the source and the groove. As the transistors shrunk into size, however, they became less reliable and leaked, ruined the power. Finnfate Development was led by Chenning Hu, who received 2020 IEEE Medal of Honor For invention. The 3D structure of Finfet provides better control of the current.

In 2021, Rudra decided to continue her education and accepted in a master’s degree program in Electrical and Computer Engineering. University of Michigan In N Arber.

“I chose this school because a special professor was working on LED devices, whose research was actually echoed with me,” he says. Professor, IEEE Partner Zetian MIIII-V semiconductor was working on optoelectronic devices. Rudra was part of the Mi’s research team for the first two semesters of his graduate program, working on the manufacture and characteristics of III-nitride-based microlands. Rudra also completed an internship Meta In Redmond, Wash, where he developed integration processes for Wavegide-based photonic devices for the AR/VR system.

“That experience helped me understand how photonics semiconductor distinguishes with manufacturing,” they say, “especially in emerging applications such as the next-gene display and wearable optics.”

After earning his degree in 2023, he joined Samsung semiconductor In Austin, Texas, as a device integration engineer. There he returned to work on Finfet, but this time the device and front-end-line integration for 14-NM node technology was analyzed and adapted and how various processes affect the electrical performance and yield of the finfate.

After a year, he left to join IBM Research.

“This is one of the most full decisions of my career so far,” he says. “Being part of such a high impact, globally collaborative initiative has been a great experience and a one that takes me forward technically and professional.”

Since working in the company, they have filed 22 US patents.

He got a sleep of respect last year, in which the name was being given. Semi -western20 under 30 list, Society of manufacturing engineers30 under 30, and Semi -weram20 under 30. Recently, he made Albani Business Review 40 list under 40.

“These beliefs,” they say, “not as a personal milestone, but as a verification of collective work, I have been a part of it, and the masters have helped shape my path, as its recognition, has been inspired as his recognition.”

Creating important connections in IEEE

Rudra joined IEEE in 2020 “Covered Engineer Chicun Network Nanostructur ZNO visible light response” Was accepted by research paper IEEE Electron Equipment Technology & Manufacturing ConferenceHe continues to renew his membership, he says, provides it due to networking opportunities, as well as technical materials that help them to stay updated on a semiconductor.

In addition to the IEEE Computer Society, he is an active member of IEEEE Electron equipment (EDS), Electronics packagingAnd Photonics Society. “Every” is home to a vibrant network of engineers, scientists and innovators, which are completed in their respective fields, “says Rudra. ,

He received one in 2022 Fellowship of Electron devices Society MasterWhich honored them by $ 2,000 for using research in areas of interest of the society. While receiving respect, he says, was a powerful motivator.

He is active IEEE young professional And Electron is a member of the YP Committee of the devices society. Being part of the community, they say, gives it access to world -class expertise and gives him resources to help them decide career decisions and to help resolve technical challenges.

He is also part of the organizing committee for this year IEEE EDS Summer SchoolTwo -day lecture program for senior citizens of the university, graduate students, postdoctoral fellow and young professionals.

“For any young professional in the stem, I believe IEEE is not just a resource; it is a launchpad,” says Rudra. “Early involvement helps you technically, professional and individually grows, some may offer some outfits.”