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    Home»Gadgets»The Chinese Research Team claims that the world’s fastest non-vulnerable memory is with the speed of writing 400ps, but it gives a poxie.
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    The Chinese Research Team claims that the world’s fastest non-vulnerable memory is with the speed of writing 400ps, but it gives a poxie.

    PineapplesUpdateBy PineapplesUpdateApril 27, 2025No Comments2 Mins Read
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    The Chinese Research Team claims that the world’s fastest non-vulnerable memory is with the speed of writing 400ps, but it gives a poxie.
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    The Chinese Research Team claims that the world’s fastest non-vulnerable memory is with the speed of writing 400ps, but it gives a poxie.


    • Chinese researchers have developed super-fast non-volatile flash memory
    • Graphine Channel 400 Picosecond Writing enables speed and frequent storage
    • The “pox” device targets AI boatin with low power, high speed performance

    A research team in China has developed whether the claims are the fastest reported non-vapor semiconductor memory devices, with a writing speed of a bit of every 400 pickeskand.

    Unfortunately nominated “pox” (phase-change oxide), a two-dimensional graphine-channel flash device developed at Fudon University in Shanghai.

    The team manufactured the device using a DIRAC graphine channel combined with a charge-tripping stack. This system-level access is rapidly operated than time, which is usually associated with volatile memory types such as SRAM and DRAM, which usually falls between 1 and 10 nanoseconds. A picoskand is a thousandth of a nanosecond.

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    Pave the way for your future applications

    Volatile memory like Sram and Dram gives high speed, but loses data when power is removed. Non-vigilant flash retains data without electricity, but works on high delays, often in tens of microcecands at NAND level. This makes low-lonely workloads such as AI invention less favorable for invention. The purpose of the POX device is to bridge that difference by combining speed and frequent storage.

    A graphine-based device uses a two-dimensional hot-career injection mechanism. Its thin-body structure increases horizontal electrical areas, improves carrier acceleration and injection efficiency. On 5V, it achieved the speed of 400ps and maintained more performance than 5.5 million cycles. Long-term retention tests showed data stability over a fake 10-year period.

    “We have greatly advanced this innovation and paved the way for its future applications,” said Jhou Peng, the lead researcher of the study, said Jhou Peng said, “To optimize the process testing conditions.

    “Our technology success is expected to not only reopen the global storage technology scenario, run industrial upgradation and promote new application scenarios, but also offers China strong support for leading to relevant areas.”

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    Liu Choonsen, who is also involved in research, said that the team has created a completely functional chip and now its purpose is to integrate it into existing equipment.

    “The next phase involves integrating it into existing smartphones and computers,” he said.

    “In this way, when deploying local models, we will no longer face hurdles such as leggings and heating due to existing storage technology.”

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    400ps Chinese claims fastest memory nonvulnerable poxie Research speed team worlds writing
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